Intel Corp. has begun operations within its first fab in China, according to Dow Jones. In 2007, Intel won approval to build a $2.5 billion, 300-mm wafer plant in northern China for chip sets. The plan called for the fab to be in the city of Dalian. The fab will produce 65-nm devices.
Intel is also expanding in the U.S. As reported, Intel recently confirmed speculation that it will build a new R&D wafer fab in Hillsboro, Ore., and upgrade other existing U.S. facilities for 22-nm production at a total investment of between $6 billion and $8 billion.
The investment will create 800 to 1,000 permanent high-tech jobs and 6,000 to 8,000 construction jobs, Intel (Santa Clara, Calif.) said. The new development fab in Oregon, to be known as D1X, is slated for R&D startup in 2013.
One analyst thinks the fab will be ''450-mm ready.'' [Via: EETimes]
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