Manufacturing
Why High-k dielectrics in sub 45nm nodes?
To meet the International Technology Roadmap for Semiconductors (ITRS) forecast that device with gate length of sub-10nm will be fabricated by 2016 advanced gate stacks with high-k dielectrics are of intensive research interests. Stringent power requirements in the chips also dictate replacement of silicon dioxide as it has already reached the direct tunneling regime. Currently, many different high-k materials have been explored to replace the s…